Wide bandgap semiconductor devices in power electronics

GaN Systems, a developer of gallium nitride power switching semiconductors, is participating in what promises to be a lively debate on one of the hottest topics at APEC 2015.  “Wide Bandgap Semiconductors devices in Power Electronics – Who, What, Where, When and Why?” is being hosted and led by Kevin Parmeter, VP Applications, Excelsys Technologies and will see panellists from device manufacturers joining power electronics design engineers to air their views.

GaN Systems’ Larry Spaziani, VP sales and marketing, is joining representatives from Rompower, Efficient Power Conversion, Excelsys Technologies, IR/Infineon, Embedded Power Labs and Vishay as they attempt to answer questions such as:  “Are we on the verge of a revolution that is taking place now, or is this something that will be become mainstream in five, ten or even twenty years?” “What are the technical hurdles and packaging constraints?”  “Who will the players be?” The audience is encouraged to participate and ask its own questions about this exciting technology.

GaN Systems is the first company to have brought a comprehensive product range of devices with current ratings from 8A to 250A to the global market.  Based on its three core IPs – Island Technology die design, GaNPX packaging and Drive Assist technology – GaN Systems’ high power GaN transistors harness the inherent properties of gallium nitride and deliver it into the hands of design engineers.

The debate is taking place on Tuesday March 17th from 5.00 pm – 6.30 pm.

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