TSMC has announced that its collaboration with HiSilicon Technologies has successfully produced the foundry segment’s first fully functional ARM-based networking processor with FinFET technology. In what is being described as a milestone in the close collaboration between the two companies TSMC is now well placed to provide industry-leading technology to meet the increasing customer demand for the next generation of high-performance, energy-efficient devices.
TSMC’s 16FinFET process promises impressive speed and power improvements as well as leakage reduction. All of these advantages overcome challenges that have become critical barriers to further scaling of advanced SoC technology. It has twice the gate density of TSMC’s 28HPM process, and operates more than 40% faster at the same total power, or reduces total power over 60% at the same speed.
“Our FinFET R&D goes back over a decade and we are pleased to see the tremendous efforts resulted in this achievement,” said TSMC President and Co-CEO, Dr. Mark Liu. “We are confident in our abilities to maximise the technology’s capabilities and bring results that match our long track record of foundry leadership in advanced technology nodes.”
TSMC’s 16FinFET has entered risk production with excellent yields after completing all reliability qualifications in November 2013. This paves the way for TSMC and customers to engage in more future product tape-outs, pilot activities and early sampling.
Built on TSMC’s 16FinFET process, HiSilicon’s new processor enables a significant leap in performance and power optimisation supporting high-end networking applications. By leveraging TSMC’s production-proven heterogeneous CoWoS (Chip-on-Wafer-on-Substrate) 3D IC packaging process, HiSilicon integrates its 16-nanometer logic chips with a 28-nanometer I/O chip for a cost-effective system solution.