Toshiba Memory Europe unveils UFS devices utilising 64-layer, 3D flash memory

Toshiba Memory Europe GmbH has had started sampling Universal Flash Storage (UFS) devices utilising Toshiba Memory Corporation’s cutting-edge 64-layer, BiCS FLASH 3D flash memory. The new UFS devices meet performance demands for applications that require high-speed read/write performance and low power consumption, including mobile devices such as smartphones and tablets, and augmented and virtual reality systems.

The new line-up will be available in four capacities: 32GB, 64GB, 128GB and 256GB. All of the devices integrate flash memory and a controller in a single, JEDEC-standard 11.5 x 13mm package. The controller performs error correction, wear levelling, logical-to-physical address translation and bad-block management, allowing users to simplify system development.

All four devices are compliant with JEDEC UFS Ver2.1, including HS-GEAR3, which has a theoretical interface speed of up to 5.8Gbps per lane (x2 lanes = 11.6Gbps) while also suppressing any increase in power consumption. Sequential read and write performance of the 64GB device are 900MB/s and 180MB/s, while the random read and write performance are around 200 per cent and 185 per cent better, respectively, than those of previous generation devices. Due to its serial interface, UFS supports full duplexing, which enables both concurrent reading and writing between the host processor and UFS device.

http://toshiba.semicon-storage.com

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