Toshiba Electronics Europe (TEE) has introduced the first 800V power MOSFET based on its high voltage DTMOS IV super junction technology. The TK17A80W uses Toshiba”s state-of-the-art single epitaxial process and is ideally suited to equipment that requires high reliability, power efficiency and a compact design. Applications will include power supplies and adapters, fly back converters and LED lighting equipment.
Compared to multi epitaxial processes, Toshiba’s Deep Trench technology delivers lower ON-resistance (RDS(ON)) at higher temperatures. It also offers reduced turn-off switching losses (EOSS) than previous technology generations. The combination of reduced increase in RDS(ON) at high temperatures and reduced EOSS provides higher efficiency for power supplies and assists designers in minimizing system size.
DTMOS IV enables faster switching performance by reducing parasitic capacitance between gate and drain. Typical CISS for TK17A80W is only 1450pF (@VDS=300V, f=100kHz). Maximum ratings are 800VDSS , ±30VGSS and 17A drain current. Maximum RDS(ON) is 0.3 Ohm.
The TK17A80W starts mass production in the fourth quarter of 2014 in a fully isolated TO-220SIS package. Samples are available now. Further performance options and TO-220, DPAK and IPAK packages will follow.