Toshiba Electronics Europe (TEE) has announced that its high-efficiency, low-voltage MOSFET technologies are now available in ultra-compact DSOP Advance package options. The new packages offer dual-sided cooling to significantly improve heat dissipation. This will help designers of high-component-density applications to minimise the PCB temperature and improve performance without board space penalties.
The DSOP Advance package shares the same 5mm x 6mm footprint as a SOP Advance device. In comparative tests operating temperatures – when used in conjunction with a suitable heatsink – for 30V MOSFETs were reduced by more than 34% at currents above 30A. In addition, in some designs the reduced thermal resistance of a DSOP Advance package may support elimination of a heatsink.
Toshiba will offer DSOP Advance packages with its existing UMOS VIII-H and its new UMOS IX-H families of MOSFET technologies. These technologies combine industry-leading on resistance (RDS(ON)) ratings with low output capacitance to deliver ultra-efficient switching performance. DSOP Advance options will be available for a number of MOSFETs with voltage ratings between 30V and 100V initially.
Target applications for the new DSOP Advance MOSFETs will include high-power density, high-performance switching designs including synchronous rectification circuitry in servers and telecoms power supply equipment, as well as power tools.