TI introduces fastest 4-A and 5-A two-output MOSFET drivers

The drivers support multiple high-frequency half-bridge and full-bridge power topologies with an extremely fast 18-nanosecond (ns) propagation delay. The combined features improve efficiency and enhance reliability in telecom, server and industrial power supply designs with 100-V surge requirements.

Specifications include: the industry’s first 120-V rated, 4-A high- and low-side drivers (TTL and pseudo-CMOS compatible input versions) that drive both N-channel high-side and low-side FETs; 0.9 ohm pull-up and pull-down resistance minimizes switching loss as the MOSFET transitions through the Miller Plateau and increased system reliability: inputs support -10 volts of direct current, and allows direct interface to gate-driver transformers without the need for rectification diodes.

TI has also introduced the industry’s fastest 5-A dual-channel low-side driver for secondary-side synchronous rectifier MOSFETs and IGBT power switches. The UCC27524 delivers low pulse distortion and high efficiency with a fast 12-ns propagation delay, 6-ns rise time with 1-ns output delay matching. The driver, which supports 4.5-V to 18-V operating voltages, has the flexibility to combine both outputs to drive up to 10-A applications, such as motor drive systems.

The UCC27210 and UCC27211 are available in an 8- or 10-pin, 4-mm x 4-mm 8-pin SON and an 8-pin SOIC package. The UCC27524 comes in industry-standard 8-pin SOIC and PDIP packages. A 3-mm x 3-mm, 8-pin WSON will be available later in the first quarter.

Texas Instruments

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