CIE Components in Electronics
Diodes Incorporated has introduced a 60V N-channel power MOSFET with a sub-100mO on-resistance. With a footprint measuring just 1.6mm x 1.6mm and a typical height of 0.5mm, the DFN1616-packaged DMN6070SFCL is intended to help achieve higher power densities in space-critical products, including cellphones, ultra-thin LCD TVs and hand-held gaming controls.
With its very low on-resistance of only 74mO typical at a VGS of 4V, the MOSFET also helps to minimise conduction losses and raise overall power efficiency. The DMN6070SFCL handles a continuous current of 2A and supports a pulsed current of 10A, enabling it to cope well with DC-DC conversion spikes.
The miniature MOSFET is just one of a series of 60V N- and P-channel devices announced by Diodes Incorporated to meet the needs of load switch, DC-DC conversion and signal switching duties. Four larger package options are also offered: SO8, SOT23, SOT223 and TO252, suiting a wide range of applications including consumer electronics, industrial controls and HVAC equipment.
