Samsung Electronics has begun mass producing the industry’s first three-dimensional (3D) V-NAND flash memory using 32 vertically stacked cell layers, which is its second generation V-NAND offering. The 32-layer 3D V-NAND, also referred to as Vertical NAND, requires a higher level of design technology to stack the cell arrays than the previous 24-layer V-NAND, yet delivers much greater production efficiency because Samsung can use essentially the same equipment it used for production of the first generation V-NAND.
In addition, Samsung has just launched a line-up of premium SSDs based on its 2nd generation V-NAND flash memory with 128 gigabyte (GB), 256GB, 512GB and 1TB storage options. After introducing 3D V-NAND-based SSDs to data centers last year, Samsung is now extending its V-NAND SSD line-up to high-end PC applications, in expanding its market base.
“We increased the availability of our 3D V-NAND by introducing an extensive V-NAND SSD line-up that covers the PC market in addition to data centers,” said Young-Hyun Jun, executive vice president, memory sales and marketing, Samsung Electronics.
The new 3D V-NAND-based SSDs have approximately twice the endurance for writing data and consume 20 percent less power, compared to planar (2D) MLC NAND-based drives.
Samsung, later this year, is looking to introduce additional premium 3D-based SSDs based on this 2nd generation V-NAND memory with even higher reliability and higher-density in satisfying a diversity of customer needs.
According to a recent research report by Gartner, the global memory market is expected to grow from US $75.5 billion in revenues to approximately US $79.7 billion in 2017, while its NAND flash portion will continue to rapidly increase to reach a more than 50 percent share or about US $44.6 billion in 2017.