“As the need is growing for more advanced software and increased data storage in smartphones and tablets, mobile device makers are expected to introduce embedded memory solutions throughout 2012 that offer higher performance and density,” said Myungho Kim, vice president of memory marketing, Device Solutions, Samsung Electronics. “Samsung will further accelerate growth in the mobile device market as it extends the advanced memory segment by providing a more expansive line-up of eMCP solutions in 2012.”
The new eMCP memory solutions will help entry- to mid-level smartphones deliver enhanced performance and longer battery life, while providing mobile handset developers with a simpler design process.
Samsung”s embedded MCP solutions are fabricated in packages that consist of a four gigabyte (GB) e-MMC[TM] (Embedded MultiMediaCard[TM]) based on 20nm-class NAND flash memory for data storage, and a choice of 256 megabytes (MB), 512MBs or 768MBs of 30nm-class LPDDR2 DRAM for supporting high-performance mobile device systems. (Each is equivalent to 2Gb, 4Gb and 6Gb, respectively.)
The 30nm-class LPDDR2 DRAM chip in the new eMCPs performs a key role in enhancing the performance of entry- to mid-level smartphones with a data transmission speed of 1,066 megabits per second (Mbps), which doubles the performance of the industry”s previous mobile DRAM (MDDR). When compared to a 40nm-class LPDDR2 DRAM, the new 30nm-class LPDDR2 DRAM increases performance by approximately 30 percent, while consuming 25 percent less power. Also, applying the 30nm-class process technology improves chip manufacturing productivity by 60 percent over 40nm-class technology.
Samsung began providing high-performance 30nm-class 4Gb LPDDR2 DRAM in March of last year. In October, Samsung came up with high-density solutions such as a 2GB LPDDR2 package that stacks four 4Gb LPDDR2 DRAM and also first started using 30nm-class LPDDR2 DRAMs for eMCPs.
Focusing on the high-end smartphone market, Samsung”s previous eMCPs combined 1GB of 30nm-class LPDDR2 DRAM with 32GBs of eMMC memory using 20nm-class NAND flash.