ROHM semiconductor at PCIM 2016: new 3rd generation 1200V/180A full SiC module for most efficient high-frequency operation

At PCIM in Nuremberg from May 10-12, 2016, ROHM Semiconductor showcased its new SiC (Silicon Carbid) power module BSM180D12P3C007 rated at 1200V/180A. Based on ROHM’s completely inhouse supply chain capacities and advanced packaging capabilities, the Half-Bridge SiC module integrates mass-produced trench-type SiC MOSFETs and SiC SBDs in the same footprint like previous modules.


ROHM has pioneered commercial power modules equipped with SiC-MOSFETs and SiC-SBDs and was able to successfully mass-produce the industry’s first trench-type SiC MOSFETs by utilising a proprietary structure, ensuring long-term reliability. The new module implements MOSFETs with their advanced UMOS structure going without JFET region and maximising SiC characteristics. It provides the lowest drain source resistance together with high speed switching performance, and – thanks to the extremely low Vf and the fast recovery performance of the built-in SiC-SBDs – it has almost no recovery loss.


As a result, the module achieves 77 per cent lower switching loss than conventional IGBT modules and 42 per cent lower switching loss than planar SiC Modules utilising a 2nd generation SiC-DMOS structure. This not only enables high-frequency operation but also contributes to smaller cooling systems as well as smaller peripheral components which in consequence paves the way to greater energy savings and end-product miniaturisation.

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