PCIM: CISSOID releases new version of HADES for SemiSouth SiC JFET

The HADES Reference Design is based on the CISSOID chipset THEMIS, ATLAS and RHEA, and is capable of sustaining junction temperatures from -55 °C up to +225 °C in metal and ceramic packages. CISSOID will be also introducing over the coming months a lower temperature version limited to 125°C, with an expected operational lifetime of at least 20 years.

With a strong focus on transportation and renewable energy applications, this gate driver solution provides optimised switching of SemiSouth’s SiC JFET technology; reliable operation for more than 20 years expected at 125°C; and low cost in mass production.

“CISSOID has already demonstrated its gate drive technology as the most reliable in harsh environment applications” said Jean-Christophe Doucet, VP Marketing at CISSOID. “What we are demonstrating with SemiSouth is a derivative solution tailored to meet the requirements of the solar and transportation markets, meeting their low-cost target, while enabling efficiency gains and the longest lifetime that beats traditional semiconductors by more than a decade.”

Driving SemiSouth’s SJEP120R100 SiC JFET, the test board was able to hard-switch 600 V and 10 A with turn-off and turn-on times of only 14 ns and 24 ns, respectively. The test board also demonstrated very low switching losses (Etotal less than 124 μJ) that were a factor of 10 to 20 lower than standard silicon IGBTs, but also lower than a number of other SiC power switches. Overall, the system demonstrated superior power efficiency, taking full advantage of the SemiSouth devices.

HADES half-bridge isolated gate driver board, P/N EVK-TIT0636B, is available from CISSOID for electrical evaluation with the high-temperature version of the chipset; a single channel, low cost version of the isolated gate drive chipset will be introduced in the coming months.


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