The device is a 20 volt (V) N-channel full bridge semi-synchronous rectifier, that incorporates a dual Schottky barrier diode supporting up to 3.2 ampere (A) operation plus two MOSFETs with a 17 milli ohm (mΩ) (typical) Rds(ON) to minimize conduction losses and substantially increase efficiency of the charging system.
Wireless inductive charging is becoming increasingly popular, freeing consumers from the traditional wired approach. It works on the principle of an electromagnetic field being created for the rapid transfer of energy between the transmitter (in the charging station) and the receiver (in the portable device). The NMLU1210 is used by the receiver side to convert AC voltage generated by the transmitter to DC voltage used for battery charging. Offered in an ultra-low inductance thermally efficient package, it is optimized specifically for power management tasks in portable electronic products. This compact IC is highly suited to use in space-constrained environments. It has an operational junction temperature of −55 ⁰C to 125 ⁰C.
“The NMLU1210 full bridge rectifier enables more efficient and faster wireless charging of portable electronics devices,” said Paul Leonard, vice president of ON Semiconductor’s Power MOSFET products division. “This innovative device will enable OEMs to offer their customers more flexibility in battery recharging which will give their products improved power features in an increasingly competitive consumer space.”
“ON Semiconductor is an important member of the Wireless Power Consortium,” said Menno Treffers, chairman of the Wireless Power Consortium. “The addition of NMLU210 to ON Semiconductor”s extensive product portfolio gives the industry more choice and makes it possible to apply the Qi wireless power standard in far more applications and products “