NXP unleashes multi-stage variable gain LNAs for base stations

NXP’s integrated approach provides a significant reduction to the overall LNA footprint and bill of materials (BoM), reducing component count by 80 percent – from 360 to 40 components in a typical implementation with a 6-channel receiver serving 3 sectors and 2Rx diversity

With a high RF input overdrive of 10-15 dBm, the BGU706x base-station LNAs is able to provide a high level of ruggedness, and make use of  NXP’s silicon germanium carbon (SiGe:C) BiCMOS process technology. NXP will showcase the BGU705x fixed gain LNAs and the BGU706x variable gain LNAs at the IMS2012 International Microwave Symposium in Montreal this week.

“Wireless infrastructure today faces a challenge as mobile data communications rapidly overtake voice communications. With its very low noise figure, our new multi-stage LNAs enable larger cell coverage, will help operators to realise significant CAPEX and OPEX savings by reducing the total number of base stations required,” said Kees Schetters, director of marketing, wireless infrastructure, NXP Semiconductors. “By simplifying design-in, the LNAs also enable engineers to focus more on pushing the performance limits of their applications to achieve a significant competitive edge.”  

NXP Semiconductors

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