NXP Semiconductors has unveiled its new Gen8+ LDMOS RF power transistors – an expansion of its eighth-generation LDMOS product line for wireless base stations with a strong focus on TD-LTE. As China prepares to roll out the world’s largest 4G network, the Gen8+ is intended to enhance NXP’s TD-LTE portfolio and deliver significant improvements in performance, flexibility and cost-efficiency.
The first Gen8+ device to be introduced, the BLC8G27LS-160AV, will be used in 15 W and 20 W power amplifiers for active antenna outdoor base stations (2.6 GHz). The device is able to handle up to 5 TD-LTE carriers simultaneously and can deliver high efficiency over the full band (2.5 to 2.7 GHz).
One of the key features of the Gen8+ portfolio is the use of air cavity plastic (ACP) packages. ACP is both less costly and more flexible than ceramic packages, which means that new product variants can be introduced more quickly. ACP packages also allow the use of improved passives, which enhance performance by reducing power consumption while increasing gain and efficiency. Gen8+ complements a wide range of other package options, including QFN, OMP and ceramic.
The Gen8+ portfolio is initially designed for base station applications at frequencies between 2300-2700 MHz. As an extension of existing NXP LDMOS product families, Gen8+ expands the wide range of power levels in each band, ranging from 5 watts to 240 watts. The impressive power capabilities and reduced footprint of Gen8+ means that further cost savings are also possible.
“Optimised for wireless base stations supporting TD-LTE networks, the launch of Gen8+ coincides with the upcoming rollout of the world’s biggest 4G network in China. By providing the most comprehensive RF power portfolio of its kind, we are focused on enabling our customers to offer the best possible quality of service at the lowest cost,” said Christophe Cugge, director of marketing, base station power amplifiers, NXP Semiconductors.