Available immediately, the new PMPB11EN and PMPB20EN 30V N-Channel MOSFETs are the first of more than 20 devices housed in the DFN2020MD-6 (SOT1220) package from NXP. Both MOSFETs have a maximum drain current (ID) of >10 A, and very low Rds(on) values of 12 mOhm typ and 16.5 mOhm typ at 10V respectively for reduced conduction losses, which enable lower power consumption and longer battery life.
Only 0.6 mm in height, the new DFN2020 MOSFETs are suitable for ultra-small load switches, power converters, and charger switches in portable applications such as smartphones and tablets. The MOSFETs can also be used for other space-constrained applications including DC motors, server and network communications, as well as LED lighting, where power density and efficiency are critical. Eight times smaller than standard SO8 packages, DFN2020 offers comparable thermal resistance, and can replace many larger MOSFET packages such as SO8, 3×3 or TSSOP8 with the same Rds(on) value range.