New generation of ‘super-efficient’ NPT IGBTs from Microsemi

Microsemi’s new discrete products are the APT40GR120B, APT40GR120S and APT40GR120B2D30. The devices are offered on a standalone basis or can be packaged in combination with one of Microsemi’s FRED or silicon carbide Schottky diodes to simplify product development and manufacturing. Additional features include: significantly lower gate charge (Qg) than competition for faster switching; hard switching operation greater than 80 KHz to enable more efficient power conversion; easy to parallel (positive temperature coefficient of Vcesat) to improve reliability in high power applications; and Short Circuit Withstand Time Rated (SCWT) for reliable operation in applications requiring short circuit capability.

The APT40GR120B transistor is offered in a TO-247 package and the APT40GR120S is packaged in surface mount D3 PAK. The APT40GR120B2D30 is a T-MAX® packaged device that includes a 30A anti-parallel, ultrafast recovery diode built with Microsemi’s proprietary “DQ” generation of low switching loss, avalanche energy rated diode technology.

Microsemi

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