CIE Components in Electronics
Mouser Electronics, Inc., the authorized global distributor with the newest semiconductors and electronic components, has signed a global distribution agreement with Transphorm, manufacturers of high-quality, high-reliability gallium nitride (GaN) transistors for high-voltage power conversion applications. According to the agreement, Mouser will distribute Transphorm’s lines of JEDEC- and AEC-Q101-qualified GaN FETs and evaluation tools.
“We are pleased to add Transphorm to our power line card,” said Kristin Schuetter, Mouser Vice President of Supplier Management. “Transphorm’s innovative high-performance GaN transistors and evaluation platforms greatly benefit designers and manufacturers developing high-voltage power-conversion applications, in a variety of vertical markets.”
“We’re excited to join Mouser’s list of global suppliers as a manufacturer of high-quality, high-reliability GaN devices,” commented Philip Zuk, Vice President of Worldwide Technical Marketing and North America Sales at Transphorm. “The agreement provides us with an incredible opportunity to bring our industry-leading GaN technology to Mouser’s extensive customer base. We look forward to working with their team as we support customers seeking to develop next-generation power systems.”
Transphorm’s 900 V GaN FETs in a TO-220 package and 650 V GaN FETs in TO-247 and TO-220 packages, available from Mouser Electronics, combine high-voltage GaN HEMT and low-voltage MOSFET technologies. The devices feature low crossover losses, reduced gate charge, and smaller reverse recovery charge, offering similar field reliability to silicon carbide (SiC) FETs and improved performance when compared to silicon MOSFETs. When compared to competitive GaN devices, the company’s FETs also offer the industry’s highest threshold voltage at 4 V and gate robustness rating at ±20 V.
Transphorm’s automotive-qualified GaN FETs include the TPH3205WSBQA, the industry’s first GaN solution to earn AEC-Q101 qualification, and the TP65H035WSQA, the industry’s first 175-degree-Celsius-rated, AEC-Q101-qualified device. As with non-automotive applications, in-vehicle power systems using the 650 V GaN FETs can gain up to 40 percent more power density while reducing overall system costs by as much as 20 percent when compared to similar silicon-based solutions.
Transphorm’s GaN FETs pair with off-the-shelf gate drivers, improving efficiency in both hard- and soft-switched circuits while allowing for ease of driveability and designability. When used in an AC-DC bridgeless totem-pole power factor correction (PFC), the GaN platform’s benefits (such as power density increase and system cost reduction) are optimized. The FETs are suitable for broad industrial, datacom, and automotive applications as well as consumer computing power systems and adapters.
Mouser is also stocking related evaluation platforms from Transphorm, which allow designers to study switching characteristics and efficiency. The kits support various power system topologies, including inverters, half-bridge buck or boost (through-hole and SMD solutions), and the bridgeless totem-pole PFC. They also cover a range of power ratings to support various applications. Examples include the 1.2 kW and 2.5 kW half-bridge evaluation platforms as well as the 2.5 kW and 4 kW bridgeless totem-pole PFC evaluation platforms.
To learn more, visit www.mouser.com/transphorm.
