Microsemi expands RF power MOSFET products offering

Microsemi”s DRF family of products integrates RF gate drivers, power MOSFETs and associated bypass capacitors in a single highly thermal performance package. The DRF1400 is a half-bridge topology and it is the first device of its type in the company”s DRF family to deliver efficiency of greater than 92 percent at 1 kilowatt (kW).  In addition, the low parasitic capacitance and inductance, coupled with the Schmitt trigger input, Kelvin signal ground, anti-ring function, invert and non-invert select pin, provide improved stability and control in kW to multi-kilowatt, high frequency ISM applications. The high level of integration also allows the product to reduce bill-of-material component counts and costs.

Additional features include: integrated RF drivers for simplified driver stage design, allowing simple logic signals at input; internal bypass capacitors for reduced parasitic inductance and most stable supply voltages; high breakdown voltage (500V) MOSFETs, enabling higher power output per half-bridge; and high thermal performance proprietary package capable of delivering up to 1.4 kW of power.


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