Microsemi has introduced a new family of 1200 volt (V) Schottky diodes based on silicon carbide (SiC) material and technology. The new diodes are targeted at a wide range of industrial applications including solar inverters, welding, plasma cutters, fast vehicle charging, oil exploration, and other high power, high voltage applications where power density, higher performance and reliability are important.
SiC offers a number of benefits compared to silicon material (Si) including a higher breakdown field strength and improved thermal conductivity, allowing designers to create devices with better performance characteristics encompassing zero reverse recovery, temperature independent behaviour, higher voltage capability, and higher temperature operation to achieve new levels of performance, efficiency and reliability.
In addition to the inherent benefits of the device, Microsemi is the only manufacturer to offer a SiC Schottky diode in a large surface mount backside solderable D3 package allowing designers to achieve increased power density and lower manufacturing costs.
“We applied our more than 25 years of power semiconductor device design and manufacturing know-how to deliver a family of SiC diodes that offers unparalleled levels of performance, reliability and overall quality,” said Russell Crecraft, general manager of Microsemi’s Power Products Group. “Next-generation power conversion systems require higher power densities, higher operating frequencies and higher efficiencies—and our new silicon carbide devices help system designers meet those needs.”