Micron launches new product category of low-standby-power products

The first 2Gb DDR3Lm will provide up to 50 percent self-refresh power savings versus standard 2Gb DDR3L while driving performance up to -1600 MT/s when needed. Micron’s 4Gb DDR3Lm product delivers the same power efficiency as the 2Gb part, but with a reduced chip count and is suited for ultra-thin and tablet customers.

Both 2Gb and 4Gb DDR3Lm will be adopted into Micron’s 30-nanometer (nm) class to further optimize the power and performance features, with the 4Gb device hitting a 3.7mA IDD6 target in standby mode, yet still supporting speeds up to -1866 MT/s.

“As computing becomes more and more mobile, longer battery life is increasingly valuable to end users,” said Geof Findley, Intel’s senior memory enabling manager. “The reduced standby power consumption of low-power memory is a move in the right direction.”

Sampling of Micron’s new DDR3Lm low-power product line begins now, with volume production on 30nm class devices expected to begin in 2Q’12.

Micron Technology

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