STMicroelectronics has introduced its latest generation of energy-efficient power devices that have been designed to reduce the environmental impact of equipment such as telecom or computing systems, solar inverters, industrial automation, and automotive applications. The company’s new STripFET VII DeepGATE MOSFETs are able to deliver improved conducting efficiency when compared to currently available 80V and 100V devices, while at the same time switching efficiency has also been increased. In addition, the devices also allow system power and efficiency targets to be met using fewer devices in small package sizes, simplifying designs and reducing equipment size in the process.
The advance in ST’s STripFET VII DeepGATE technology is an enhanced MOSFET gate structure, which lowers device on-state resistance while also reducing internal capacitances and gate charge for faster, more efficient switching. The devices also have high avalanche ruggedness to survive potentially damaging hard conditions, which makes them a strong choice for automotive applications.
More than 15 STripFET VII DeepGATE devices are available immediately for sample or production orders, including the STP270N8F7 80V device and several 100V parts in a choice of TO-220, DPAK, PowerFLAT 5×6, and 2-lead or 6-lead H2PAK packages.