Industry-leading 1800V RC-IGBT with monolithic integrated diode unveiled

Toshiba Electronics Europe (TEE) has unveiled an IGBT with an integrated reverse recovery diode that offers a voltage rating of 1800V. The GT40WR21 has been designed for induction heating and induction cooking designs and other applications demanding high-performance voltage resonator inverter switching.

The GT40WR21 1800V N-channel RC-IGBT (Reverse Conducting IGBT) consists of a freewheeling diode monolithically integrated into an IGBT chip. The TO247-equivalent package TO-3P (N) measures just 15.5mm x 20.0mm x 4.5mm. Ultra high-speed switching is supported by a typical IGBT fall time of only 0.15µs.

The new device is rated for a collector current (IC) of 40A and can handle peak currents of 80A for 1ms. Typical saturation voltage at 40A is only 2.9V. Maximum collector power dissipation at 25°C is 375W. The integrated diode is rated for a forward current of 20A and a peak current (for 100µs) of 80A.

As with previous models in Toshiba’s N-channel IGBT family, the GT40WR21 can support high-temperature operation with a maximum junction temperature (Tj) of 175°C. Low turn-off switching losses ensure high-efficiency operation.



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