GaN Systems, a developer of gallium nitride power switching semiconductors, has appointed Shenzhen APL to distribute its Island Technology high-power GaN devices in China and Taiwan. SZ APL is headquartered in Shenzhen with additional offices in Shanghai, Beijing, and Taipei. The company has extensive experience in power electronics components distribution to major Tier1 customers in the automotive, industrial and enterprise segments.
Announcing the deal, Girvan Patterson, president, GaN Systems said: “We are delighted to have signed SZ APL as a distributor, as it has both significant knowledge of power electronics and strong relationships with Tier1 Chinese and Taiwanese customers. Demand for our GaN power switching transistors is growing very rapidly as manufacturers seek to design smaller, lighter and more power-efficient products in order to gain competitive edge. We are expecting multiple consumer and enterprise products designed with our GaN devices to be launched in the region in early 2016, with other applications from our industrial and automotive customers to follow later next year.”
Henry Ruan, President SZ APL commented: “We are very excited about our partnership with GaN Systems, which allows us to offer our customers the world’s best GaN power transistors to meet the challenges of next-generation power electronics. Prior to signing our distribution agreement with GaN Systems, discussions with our Tier1 customers confirmed GaN Systems as their first choice manufacturer of GaN E-HEMTs, so we are very pleased to be able to offer its product range – the broadest on the market – to our customers throughout China and Taiwan.”
Charles Bailley, GaN Systems’ senior director, Sales and Marketing, Asia added: “SZ APL has many key relationships with major Tier1 customers in China and Taiwan, as well as a strong focus and understanding of power electronics and power ICs. During 2015, we have significantly increased our customer penetration in China and Taiwan and look forward to working with SZ APL to continuously add further major design wins.”
GaN Systems is the first company to have developed and productised a comprehensive portfolio of GaN E-HEMT power devices with current ratings from 7A to 250A, in both 650V and 100V ranges. GaN Systems’ Island Technology die design, combined with the extremely low inductance and thermal efficiency of GaNPX packaging and DriveAssist™ technology, provides their GaN E-HEMTs with 45x improvement in switching and conduction performance over silicon MOSFETs and IGBTs.