Cree has introduced two new gallium nitride (GaN) high electron mobility transistors (HEMTs) that are suitable for use in 2.9–3.5GHz S-Band radar amplifier systems, including: weather, air traffic control, marine, port surveillance, and search and rescue radar applications.
The devices, the 150W CGHV35150 and 400W CGHV35400F, are based on Cree’s high power density 50V, 0.4µm GaN on silicon carbide (SiC) foundry process and performance rated at 85°C case. Both exhibit high efficiency, high power gain, wide bandwidth capabilities, and uniform performance at high temperatures.
The CGHV35150 features 150W typical output power, 13.5dB power gain, and 50% typical drain efficiency. The CGHV35400F features 400W typical output power, 10.5dB power gain, and 60% typical drain efficiency. Both the 150W and 400W S-Band GaN HEMTs are specified at 85°C case and feature <0.3dB pulsed amplitude droop.
In addition theses transistors also feature considerably smaller footprints than competing gallium arsenide (GaAs) or silicon (Si) RF technology, enabling enhanced design flexibility. The 400W S-Band GaN HEMTs are supplied in a ceramic/metal flange package and the 150W devices can be supplied in ceramic/metal flange or pill packages.