GaN Systems, a developer of gallium nitride power switching semiconductors, is presenting a paper entitled “The Automotive Market Opportunity for GaN” at the PCIM Europe Conference in Nuremberg. The presentation will be given by Girvan Patterson, President, GaN Systems on Wednesday 20th May at 11.00 am in a special session in the Brüssel Room chaired by experienced industry commentator and editor, Achim Scharf from Techmedia International.
According to a report from research organisation Yole Developpement, EV/HEV applications will be a key sector in the automotive market opportunity for the ultra-fast switching and conduction performance offered by gallium nitride (GaN) power switching semiconductors: sales over the next five years are expected to be rapid and exceed over $500M by 2020. “The Automotive Market Opportunity for GaN” looks at the requirements of EV/HEV applications including EV/HEV power and operating voltage requirements, specific on-resistance and Figure of Merit (FOM), and examines in detail a yieldable large area 650V/100A GaN transistor. Current and projected cost/performance parameters of such very large area GaN power switching transistors, SiC and IGBTs are compared.
The special session also includes presentations from EPC, Transphorm and Infineon, and is followed by what is sure to be a lively Q & A session and debate in the afternoon.
GaN Systems is the first company to have developed and brought a comprehensive product range of devices with current ratings from 8A to 250A to the global market – its Island Technology die design, combined with its extremely low inductance and thermally efficient GaNPXT packaging and Drive Assist technology means the company’s GaN transistors offer a 40-fold improvement in switching and conduction performance over traditional silicon MOSFETs and IGBTs. Devices are available now through its worldwide distribution network.