Advanced Power Electronics launches dual n- and p-channel MOSFETs for battery applications

Advanced Power Electronics, a Taiwanese manufacturer of MOS power semiconductors for DC-DC power conversion applications, has launched two new power MOSFETs for battery management and protection applications, the AP9922GEO-HF-3 and AP9923GEO-HF-3, dual n- and dual p-channel enhancement-mode products respectively.

Both products feature low on-resistance, 16m? for the AP9922GEO-HF-3 and 25mO for the AP9923GEO-HF-3, and both devices are capable of operating with gate drive down to 1.8V. RoHS-compliant and halogen-free, the devices are available in the small, thin TSSOP-8 package.

Commenting Ralph Waggitt, President/CEO, Advanced Power Electronics Corp. said, “We specialise in providing the designer with the best combination of fast switching, ruggedness, ultra low on-resistance and cost-effectiveness. As designers of battery-powered applications continue to focus on battery life, it becomes increasingly more important to address the need to manage the battery efficiently, and provide appropriate components for efficient protection.”


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