Toshiba develops low reverse-current Schottky diode with improved thermal performance

Toshiba Electronics Devices & Storage Europe announces the launch of their new Schottky barrier diode product “CUHS10F60”. The device is targeted at applications such as rectification and backflow prevention in power supply circuits.

The new CUHS10F60 features a low thermal resistance of 105°C/W in its newly developed US2H package that has the packaging code “SOD-323HE”. The package’s thermal resistance has been reduced by about 50 per cent compared to the conventional USC package, enabling easier thermal design.

Further improvements in performance have also been made when compared to other family members. In comparison to the CUS04 Schottky diode, the maximum reverse current has been reduced by around 60 per cent to 40µA. This contributes to a lower power consumption in applications where it is used. In addition, its reverse voltage has been increased from 40V to 60V. This increases the range of applications where it can be used compared to the CUS10F40.

The CUHS10F60 is available and shipping in production quantities as of today.

www.toshiba.semicon-storage.com

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