SST announces qualification of embedded SuperFlash on 110 nm CMOS process
Published: 17 February 2017 - 15:00 - Amy Wallington
Microchip Technology Inc., a leading provider of microcontroller, mixed-signal, analog and Flash-IP solutions, through its Silicon Storage Technology (SST) subsidiary, announced today qualification and availability of SST’s third generation embedded SuperFlash (ESF3) non-volatile memory (NVM) on 110 nm Complementary Metal-Oxide-Semiconductor (CMOS) platform.
SST’s embedded SuperFlash memory solution offers low power, high reliability, superior data retention and high endurance benefits to smartcard, microcontroller (MCU) and other flash-enabled specialised IC designers with a cost-effective, embedded Flash solution. In smartcard applications, the fast erase time and low power offers a uniquely low energy envelope which is critical for enabling low power applications such as Near Field Communication (NFC) and dual interface smartcards.
For the first time SST’s ESF3 technology is available to fabless and Integrated Device Manufacturers (IDMs) on a highly cost-effective 8 inch 110 nm CMOS platform. This ESF3 platform is qualified for 300,000 erase and program cycles making it ideally suited for smartcard and other high-endurance IC designs.
“The combination of low-power ESF3 technology on an advanced 110 nm process node opens up exciting new product opportunities, especially for the secure smartcard market,” said Vipin Tiwari, director of worldwide marketing and business development for SST. “Now customers who require low power, high-endurance embedded Flash can keep production costs down by using this mainstream eight inch CMOS platform.”
Contact SST for more information on SST’s extensive custom library of off-the-shelf IP blocks optimised for secure/smartcard System-on-Chips (SoCs).