SiC now, it’s real: Visit Microsemi at PCIM Europe

Visit the Microsemi team in hall 6, booth 318 at the 2018 Power Conversion and Intelligent Motion Conference (PCIM Europe) taking place June 5-7, 2018 at Nuremburg Messe, Germany from 9:00-17:00 daily.

We will be showcasing our newest innovations including live and static demonstrations that include three-phase Vienna power factor correction (PFC)topology reference design, SiC MOSFET driver boards, power core modules (PCMs) and hybrid power drives (HPD510 and HPD 520), DRF1300 reference design and DRF1510 reference design.

• Three-phase Vienna PFC: Vienna PFC Reference Design suitable for fast EV chargers and power supplies for industrial applications featuring Microsemi’s rugged next-generation SiC MOSFETs and diodes. To learn more, click here.
• SiC MOSFET driver boards
• SiC MOSFET driver board showcasing Microsemi’s brand new SP6LI (low inductance) module featuring a stray inductance < 3 nH to fully benefit from SiC technology and designed to be easy to parallel. Up to 1200 V and 586 A. To learn more, click here.
• SiC MOSFET driver board displaying Microsemi’s classic SP3 module. Up to 400 kHz switching frequency, 12 V VIN supply and capable of 16 W of gate drive power/side. To learn more, click here.
• SiC MOSFET driver board featuring Microsemi’s SiC APTMC120AM20CT1AG power module (SP1 package – half bridge topology) and ADI ADuM4135 driver.
• Power core module (PCM) and hybrid power drive (HPD510)
  • 5 kVA (540 VDC) three-phase power inverter for motor drive featuring SiC MOSFETs or IGBTs designed per Airbus standard specifications for flight-critical actuation drives. Partial discharge, solenoid drive, current and thermal sensing capabilities included. Completed and passed all DO-160 environmental and EMC certification requirements. Line replaceable unit to allow for ultra-fast in field maintenance. To learn more, click here.
• Hybrid power drive (HPD520)
  • 5 kVA (540 V) three-phase power inverter for motor drive SiC MOSFETs or IGBTs scalable to 20 kVA (540 V), designed for aircraft program with proven in-system performance. Current, thermal sensing and partial discharge capabilities included. Printed circuit board interface allowing for optimal design integration. To learn more, click here.
• DRF1300 reference design: The DRF1300/Class-D push-pull RF generator is a reference design that allows the designer the ability to evaluate an 80 per cent efficient 2000 W push-pull pair Class-D RF generator. To learn more, click here.
• DRF1510 reference design: The DRF1510/CLASS-D full-bridge RF generator is a reference design that allows the designer the ability to evaluate a 93 per cent efficient 4500 W Class-D full bridge RF generator. The DRF1510 is the most compact ISM band hybrid module for plasma application. It is rated for 4 kW @13.56 MHz, capable of 6 kW peak power, it uses the best-in-class integrated driver.

Conference Session – Room Brüssel 1 SiC Devices II

14:00 -14:25 Wednesday, 6 June

“Beyond the Datasheet: Commercialization of 700 V – 1.7 kV SiC Devices with Exceptional Ruggedness for Automotive & Industrial Applications”

Poster Sessions Tuesday 15:15- 17:15, Located in the Main Foyer

“Very Low Stray Inductance, High Frequency 1200V_ 2 mOhms SiC MOSFET Phase Leg Module”

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