Cree, a market leader in silicon carbide (SiC) power devices, has expanded its design-in support for the industry’s first commercially-available SiC MOSFET power devices with a fully-qualified SPICE model. Using the new SPICE model, circuit designers will be able to evaluate the benefits of the SiC Z-FET MOSFETs that have been designed to provide a higher level of efficiency than is possible with conventional silicon power switching devices for comparably-rated devices.
SiC MOSFETs have significantly different characteristics than silicon devices and therefore require a SiC-specific model for accurate circuit simulations. Cree’s behaviour-based, temperature-dependent SPICE model is compatible with the LT spice simulation program and enables power electronics design engineers to reliably simulate the advanced switching performance of the CMF10120D and CMF20120D Z-FETs in board-level circuit designs.
These SiC MOSFETs are capable of delivering switching frequencies that are up to 10 times higher than IGBT-based solution and their higher switching frequencies can enable smaller magnetic and capacitive elements, helping to shrink the overall size, weight and cost of power electronics systems.
This SiC MOSFET SPICE model adds to the company’s comprehensive suite of design-in support tools, technical documentation, and reliability information to provide power electronics engineers with the design resources necessary to implement SiC power devices into the next generation of power systems.
