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Cree has introduced a series of packaged diodes that deliver what is believed to be the highest blocking voltage available in SiC Schottky technology. The 1700V Z-Rec Schottky diodes are almost able to eliminate the reverse recovery losses suffered in silicon PiN diode alternatives, enabling ultra-efficient, smaller and lighter systems.
These newly released packaged products extend the performance improvements and system cost savings enabled by Z-Rec technology at 1700V to lower-power applications designed with discrete components.
While the 1700V bare die have been available for customers who design their own custom power modules, the new TO-247-2 packages allow customers to take advantage of SiC for lower-power 1700V designs, enable more design flexibility in choosing current levels, and support a faster time to market.
“The availability of 1700V SiC Schottky diodes provides a number of advantages for design engineers in high-voltage power applications,” explained Cengiz Balkas, Cree vice president and general manager, Power and RF. “Silicon carbide diodes enable maximum power efficiency and better EMI performance. The switching loss improvement allows for increased system frequencies that can reduce the size of magnetic and capacitive components. As a result significant reductions in system size, weight and cost can be achieved. Moreover, the availability of 1700V SiC diodes can eliminate the need for stacking multiple lower voltage silicon diodes, thereby cutting component count, improving thermal performance and increasing reliability."
Designated the C3Dxx170H Series, the new Cree SiC Schottky diodes are rated for 10A/1700V and 25A/1700V and are available in an industry standard TO-247-2 package. Operating junction temperature is rated for -55°C to +175°C.
