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ElectroTestExpo
CISSOID, a supplier of high temperature semiconductor solutions, has released PROMETHEUS-II, a fast High Temperature Power Transistor Driver reference design suitable for operation from -55°C up to +225°C. PROMETHEUS-II has been developed to drive Silicon-Carbide (SiC), GaN and other Power Devices such as MOSFET’s, IGBT, JFET and BJT in highly demanding applications requiring reliable and continuous operation up to 225°C.
PROMETHEUS-II is the next product in Cissoid’s family of TITAN power drivers, which the company is going to further expand in the future. It is a reference design based on the recently introduced high temperature half-bridge driver CHT-HYPERION. All active components of the bill-of-material are high temperature proven products ensuring reliable operation at extreme temperatures.
PROMETHEUS-II provides greater sink/source current capability, shorter delays and faster rise and fall times. The current capability depends on the MOSFETs used in the output push-pull stage. As an example, the CHT-NMOS4005 is able to sink up to 6A at 25°C in switching mode. For applications requiring higher current capabilities, the CHT-NMOS4010 (for 12A at 25°C) or CHT-NMOS4020 (for 22A at 25°C) can be used.
PROMETHEUS-II is to be used with high voltage, high power devices in DC or AC Motor Drives, Switched Mode Power Supplies (SMPS) and any other power conversion application within high temperature environment or whenever system designers want to skip expensive cooling. Aeronautics (fly-by-wire), Train, Automotive (electric and hybrid vehicle), Industrial and Oil & Gas are amongst the target markets.
